Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer

Chakrabarti, S., Halder, N., Sengupta, S., Ghosh, S., Mishima, T. D. and Stanley, C. R. (2008) Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer. Nanotechnology, 19(50), p. 505704. (doi: 10.1088/0957-4484/19/50/505704)

Abstract

The vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin (7-9 nm) spacer layer has been investigated by transmission electron microscopy and photoluminescence measurements. The nanoscale dots are grown by molecular beam epitaxy (MBE) at 0.028 ML s(-1) growth rate. The active dots having higher monolayer coverages showed reduced ordering due to local strain at the growth surface. Also the active dots with increased monolayer coverage is a probable cause of tunneling-assisted carrier transfer between the dot layers

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Stanley, Professor Colin
• Authors: Chakrabarti, S., Halder, N., Sengupta, S., Ghosh, S., Mishima, T. D., and Stanley, C. R.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Nanotechnology
• ISSN: 0957-4484