Kong, X., Krasa, D., Zhou, H. P., Williams, W., McVitie, S. , Weaver, J. M. R. and Wilkinson, C. D. W. (2008) Very high resolution etching of magnetic nanostructures in organic gases. Microelectronic Engineering, 85(5-6), pp. 988-991. (doi: 10.1016/j.mee.2007.12.006)
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Abstract
Two methods for high resolution dry etching of permalloy (NiFe) and iron (Fe) nanostructures are presented and discussed. The first involves the use of carbon monoxide (CO) and ammonia (NH3) as etching gases, the second uses methane (CH4), hydrogen (H-2) and oxygen (O-2). In both etching processes volatile metallo-organic compounds are the resulting reaction products. The patterned and dry etched thin films were observed with SEM and TEM to study the quality of each of the two processes. It is found that the CO/NH3 process yields higher etch rates, higher selectively with respect to the SiN mask used, and less redeposition than the CH4/H-2/O-2 process. (C) 2007 Elsevier B.V. All rights reserved
| Item Type: | Articles |
|---|---|
| Additional Information: | 33rd International Conference on Micro- and Nano-Engineering Copenhagen, DENMARK, SEP 23-26, 2007 |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Zhou, Dr Haiping and McVitie, Professor Stephen and Weaver, Professor Jonathan and Kong, Dr Xiang and Wilkinson, Professor Christopher |
| Authors: | Kong, X., Krasa, D., Zhou, H. P., Williams, W., McVitie, S., Weaver, J. M. R., and Wilkinson, C. D. W. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Microelectronic Engineering |
| ISSN: | 0167-9317 |
| ISSN (Online): | 1873-5568 |
| Published Online: | 16 December 2007 |
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