Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET

Kovac, U., Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. (2008) Statistical simulation of random dopant induced threshold voltage fluctuations for 35 nm channel length MOSFET. Microelectronics Reliability, 48(8-9), pp. 1572-1575. (doi: 10.1016/j.microrel.2008.06.027)

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Abstract

Intrinsic parameter fluctuations have become a very important problem for the scaling and integration of future generations of nano-CMOS transistors impacting on circuit and systems yield and reliability. In this paper random discrete dopant (RDD) induced threshold voltage variations have been Studied using the Glasgow 3D atomistic drift/diffusion simulator. For the first time, we have carried out statistical simulation based on groundbreaking sample of 100,000 transistors which may assess more than 4 sigma of the statistical distribution. In order to correctly access the accuracy and the confidence level of the statistical parameters, we have carried Out comprehensive statistical analysis using state-of-art statistical tools amenable to Our problem. We use the first four moments to fit distribution of RDD induced fluctuations in the threshold voltage by means of several statistical approaches. (C) 2008 FIsevier Ltd. All rights reserved

Item Type:Articles
Additional Information:19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Maastricht, NETHERLANDS, SEP 29-OCT 02, 2008
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kovac, Mr Urban and Millar, Dr Campbell and Reid, Mr David and Roy, Dr Gareth and Roy, Professor Scott and Asenov, Professor Asen
Authors: Kovac, U., Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Microelectronics Reliability
ISSN:0026-2714

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