Si-Sio(2) interface band-gap transition - effects on MOS inversion layer

Markov, S., Sushko, P.V., Roy, S., Fiegna, C., Sangiorgi, E., Shluger, A.L. and Asenov, A. (2008) Si-Sio(2) interface band-gap transition - effects on MOS inversion layer. Physica Status Solidi A: Applications and Materials Science, 205(6), pp. 1290-1295. (doi: 10.1002/pssa.200778154)

Abstract

Density functional theory simulation results of the atomic structure at the Si-SiO2 interface implies a non-abrupt transition of the band-gap within the oxide. The depth of the transition, 2-6 angstrom, is comparable to the approximately 1 nm oxide thickness in nano-CMOS devices, and is expected to affect their characteristics. Using hierarchical simulation approach, we combine for the first time ab-initio density functional theory simulations of the interface, with self-consistent Poisson-Schrodinger one-dimensional device simulations, and estimate the impact of interface band-gap transition on the inversion layer quantisation, capacitance, and tunnelling characteristics of a metal-oxide -semiconductor structure.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Markov, Dr Stanislav and Roy, Professor Scott and Asenov, Professor Asen
• Authors: Markov, S., Sushko, P.V., Roy, S., Fiegna, C., Sangiorgi, E., Shluger, A.L., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Physica Status Solidi A: Applications and Materials Science
• Publisher: Wiley - V C H Verlag GmbH & Co. KGaA
• ISSN: 1862-6300
• ISSN (Online): 1862-6319

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
36842	1	Meeting the materials challenges of nano-CMOS electronics	Asen Asenov	Engineering & Physical Sciences Research Council (EPSRC)	GR/S80097/01	Electronic and Nanoscale Engineering