Accurate statistical description of random dopant-induced threshold voltage variability

Millar, C., Reid, D., Roy, G., Roy, S. and Asenov, A. (2008) Accurate statistical description of random dopant-induced threshold voltage variability. IEEE Electron Device Letters, 29(8), pp. 946-948. (doi: 10.1109/LED.2008.2001030)

Abstract

We have studied the detailed threshold voltage distribution in a state-of-the-art n-channel MOSFET in the presence of random discrete dopants. A ground-breaking sample of 100 000 transistors with statistically unique random dopant distributions were simulated using the Glasgow 3-D device simulator and advanced grid computing technologies. The results indicate that the threshold voltage distribution deviates substantially from a Gaussian distribution, which may have significant implications for the margins used in circuit design, particularly in SRAM cells

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Millar, Dr Campbell and Reid, Mr David and Roy, Dr Gareth and Roy, Professor Scott and Asenov, Professor Asen
• Authors: Millar, C., Reid, D., Roy, G., Roy, S., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Electron Device Letters
• Publisher: Institute of Electrical and Electronics Engineers
• ISSN: 0741-3106
• ISSN (Online): 1558-0563