Heat blocking gallium arsenide solar cells

Rahman, F., Farmer, C.D., Schmidt, C., Pfaff, G. and Stanley, C.R. (2008) Heat blocking gallium arsenide solar cells. Applied Physics A: Materials Science and Processing, 90(2), pp. 231-236. (doi: 10.1007/s00339-007-4293-1)

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Publisher's URL: http://dx.doi.org/10.1007/s00339-007-4293-1

Abstract

The solar cell industry is witnessing an era of unprecedented growth and this trend is set to continue for the foreseeable future. Here we describe a heat reflection pigment-coated single-junction gallium arsenide solar cell that is capable of reflecting heat-inducing near-infrared radiation. The cell maintains its performance better than non-coated cells when exposed to infrared-rich radiant flux. In situations where solar cells get heated mainly from incident infrared radiation, these cells exhibit superior performance. The heat reflecting pigment, cell structure, coating process and cell performance have been described

Item Type:Articles
Keywords:COATINGS EFFICIENCY GROWTH REFLECTION silicon TIO2
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Farmer, Dr Corrie and Stanley, Professor Colin and Rahman, Dr Faiz
Authors: Rahman, F., Farmer, C.D., Schmidt, C., Pfaff, G., and Stanley, C.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics A: Materials Science and Processing
ISSN:0947-8396
ISSN (Online):1432-0630
Published Online:30 October 2007

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