Graded-Bandgap Quantum-Dot Lasers and Arrays

Yanson, D. A., Marsh, J. H. , McDougall, S. D., Kowalski, O. P., Bryce, A. C. and Kim, S. S. (2008) Graded-Bandgap Quantum-Dot Lasers and Arrays. In: 2008 IEEE 20th International Conference on Indium Phosphide and Related Materials (IPRM). Series: Conference Proceedings - Indium Phosphide and Related Materials. IEEE: New York, pp. 501-503. ISBN 978-1-4244-2258-6

Full text not currently available from Enlighten.

Abstract

Novel bandgap-engineered quantum-dot devices are reported: a dual-wavelength laser, a gain-broadened laser/amplifier employing a bandgap-graded cavity, and a multi-wavelength laser array with a 20 nm tuning range at 1280 nm. The devices are realized using a multi-bandgap post-growth intermixing technique

Item Type:Book Sections
Additional Information:20th International Conference on Indium Phosphide and Related Materials, Versailles, FRANCE, MAY 25-29, 2008 Series ISSN: 1092-8669
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Yanson, D. A., Marsh, J. H., McDougall, S. D., Kowalski, O. P., Bryce, A. C., and Kim, S. S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:2008 IEEE 20th International Conference on Indium Phosphide and Related Materials (IPRM)
Publisher:IEEE
ISSN:1092-8669
ISBN:978-1-4244-2258-6

University Staff: Request a correction | Enlighten Editors: Update this record