Statistical enhancement of combined simulations of RDD and LER variability: what can simulation of a 10⁵ sample teach us?

Reid, D., Millar, C., Roy, G., Roy, S. and Asenov, A. (2009) Statistical enhancement of combined simulations of RDD and LER variability: what can simulation of a 10⁵ sample teach us? In: Proceedings of the 2009 IEEE International Electron Devices Meeting (IEDM), Baltimore, USA, 7-9 December 2009. IEEE Computer Society, pp. 657-660. ISBN 9781424456390 (doi: 10.1109/IEDM.2009.5424241)

Abstract

Using 3D simulations of statistical ensembles of unprecedented size, we have studied statistical threshold voltage variations induced by the combined effects of random dopants and line edge roughness in a state of the art 35 nm MOSFET. Statistical samples of 10⁵ microscopically different transistors have been simulated. Based on careful statistical analysis of the simulation results we have developed statistical enhancement techniques, which deliver a high degree of statistical accuracy at a greatly reduced computational cost.

• Item Type: Book Sections
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Millar, Dr Campbell and Roy, Dr Gareth and Roy, Professor Scott and Asenov, Professor Asen
• Authors: Reid, D., Millar, C., Roy, G., Roy, S., and Asenov, A.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Publisher: IEEE Computer Society
• ISBN: 9781424456390