RC variability of short-range interconnects

Twaddle, F.J., Cumming, D.R.S., Roy, S., Asenov, A. and Drysdale, T.D. (2009) RC variability of short-range interconnects. In: IWCE 2009: 13th International Workshop on Computational Electronics, Beijing, China, 27-29 May 2009, pp. 121-124. (doi: 10.1109/IWCE.2009.5091143)

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Publisher's URL: http://dx.doi.org/10.1109/IWCE.2009.5091143


Line edge roughness (LER) in end-of-the-roadmap integrated circuit interconnects causes variability in their resistance R, capacitance C and hence also their RC delay. We present an analysis of LER-induced variability of resistance, capacitance and delay of short-range interconnects within standard cells at the 32, 22 and 18 out technology nodes using both a commercial RC extraction tool as well as a fast quasi-analytical (QA) method. Our QA method includes size dependent resistivity which, when coupled with LER, reveals increased resistance variability and total resistance in interconnects at these technology nodes. For example, the QA method predicts variability of 52% in resistance, 16% in capacitance and 36% in RC delay. When LER is the dominant source of variability there is a correlation of -0.8 between resistance and capacitance. Our results indicate interconnect variability is a significant and worsening problem, which should be included in statistical models of standard cells.

Item Type:Conference Proceedings
Additional Information:ISBN: 9781424439270
Glasgow Author(s) Enlighten ID:Cumming, Professor David and Drysdale, Dr Timothy and Roy, Professor Scott and Asenov, Professor Asen
Authors: Twaddle, F.J., Cumming, D.R.S., Roy, S., Asenov, A., and Drysdale, T.D.
Subjects:T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE Computer Society

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