Cheng, B., Brown, A.R., Roy, S. and Asenov, A., (2010) PBTI/NBTI-related variability in TB-SOI and DG MOSFETs. IEEE Electron Device Letters, 31(5), pp. 408-410. (doi: 10.1109/LED.2010.2043812)
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Abstract
We study positive bias temperature instability/negative bias temperature instability (PBTI/NBTI)-related aging-dependent statistical variability (SV) in 32-nm thin-body silicon-on-insulator (TB-SOI) and 22-nm double-gate (DG) MOSFETs using comprehensive 3-D numerical simulation. Results indicate that a high degree of PBTI/NBTI degradation can introduce a similar level of SV as the variability in the initial "virgin" devices introduced by random discrete dopants and line edge roughness. Simulations have shown that the TB-SOI and the DG MOSFETs have different susceptibilities to PBTI/NBTI-induced variability.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Brown, Mr Andrew and Cheng, Dr Binjie and Roy, Professor Scott and Asenov, Professor Asen |
Authors: | Cheng, B., Brown, A.R., Roy, S., and Asenov, A., |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Electron Device Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 0741-3106 |
ISSN (Online): | 1558-0563 |
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