A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices

Longo, P., Paterson, G.W. , Holland, M.C., Thayne, I.G. and Craven, A.J. (2009) A nanoanalytical investigation of the Ga2O3/GaGdO dielectric gate stack for InGaAs based MOSFET devices. Microelectronic Engineering, 86(7-9), pp. 1568-1570. (doi: 10.1016/j.mee.2009.03.131)

Abstract

In this paper, a subnanometer characterization of the Ga2O3/GdGaO dielectric gate stack grown on top of InGaAs lattice matched to n(+) InP substrate is presented. The paper shows the analysis of two samples grown using different substrate temperature. This clearly affects the electrical characteristics as well as the photoluminescence properties. The paper also describes how the growth conditions of oxide stack affect the elemental distribution across the interface region.

• Item Type: Articles
• Additional Information: INFOS 2009
• Keywords: Chemical analysis, device, devices, dielectric stack, eels, electrical properties, engineering, GaAs, growth, inGaAs, mosfet, oxide, oxide layer, photoluminescence, physics, science, substrate, TEM, top
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Thayne, Prof Iain and Longo, Dr Paolo and Paterson, Dr Gary and Craven, Professor Alan and Holland, Dr Martin
• Authors: Longo, P., Paterson, G.W., Holland, M.C., Thayne, I.G., and Craven, A.J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Microelectronic Engineering
• ISSN: 0167-9317
• Published Online: 05 April 2009