Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology

Hou, L. , Haji, M., Dylewicz, R., Qiu, B.C. and Bryce, A.C. (2010) Monolithic 45-GHz mode-locked surface-etched DBR laser using quantum-well intermixing technology. IEEE Photonics Technology Letters, 22(14), pp. 1039-1041. (doi: 10.1109/LPT.2010.2049566)

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Publisher's URL: http://dx.doi.org/10.1109/LPT.2010.2049566

Abstract

The 45-GHz passively mode-locked AlGaInAs-InP 1.55-mu m lasers integrated with surface-etched distributed Bragg mirrors have been fabricated. Quantum-well intermixing was used to provide low absorption loss gratings with accurate wavelength control. The lasers produce 3.6-ps Gaussian pulses with time-bandwidth product of 0.57.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Dylewicz, Dr Rafal and Bryce, Prof Ann and Hou, Dr Lianping and Haji, Dr Mohsin
Authors: Hou, L., Haji, M., Dylewicz, R., Qiu, B.C., and Bryce, A.C.
Subjects:T Technology > T Technology (General)
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
ISSN:1041-1135
ISSN (Online):1941-0174
Published Online:06 May 2010

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering & Physical Sciences Research Council (EPSRC)EP/E065112/1Electronic and Nanoscale Engineering