Rahman, F. (2009) Lanthanide ion incorporation in gallium nitride through a salt melt process. Journal of Optoelectronics and Advanced Materials, 11(3), pp. 326-330.
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Abstract
Lanthanide ions have been doped in epitaxial gallium nitride material through a liquid phase salt melt process. The technique involves a brief photolytic etching of the sample surface followed by heating with a melt of a selected lanthanide halide under reducing conditions. In this work, hydrogen sulphide entrained in nitrogen gas was used to produce the reducing ambient. Europium-doped GaN pumped with above-gap UV radiation showed strong red emission. The temperature dependence of the intensity of this red emission is also described. Neodymium caused surface pitting and consequent enhancement of defect-generated yellow luminescence. Doping with cerium resulted in a diffuse broadband ultraviolet emission but no specific emission lines
| Item Type: | Articles |
|---|---|
| Keywords: | Chemical-vapor-deposition, dependence, earth-doped gan, electroluminescent devices, emission, enhancement, etching, gallium nitride, gas, intensity, ions, lanthanide ions, lines, optics, photoluminescence, physics, rare earths, red-light emission, room-temperature, salt melt, science, single-crystals, thermal doping, thin-films, vacancies, yellow luminescence |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Rahman, Dr Faiz |
| Authors: | Rahman, F. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Optoelectronics and Advanced Materials |
| Journal Abbr.: | JOAM |
| ISSN: | 1454-4164 |
| ISSN (Online): | 1841 - 7132 |
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