Electron beam lithography using plasma polymerized hexane as resist

Pedersen, R.H., Hamzah, M., Thoms, S. , Roach, P., Alexander, M.R. and Gadegaard, N. (2010) Electron beam lithography using plasma polymerized hexane as resist. Microelectronic Engineering, 87(5-8), pp. 1112-1114. (doi: 10.1016/j.mee.2009.11.043)

Abstract

We present electron beam lithography using thin layers of plasma polymerized hexane as resist, as an alternative for conventional spincoated resists. Hexane is chosen due to the possible bioapplications, as well as the relatively simple polymerization chemistry. Successful patterning of micro- and nanopatterns are achieved with doses of 5000-25000 mu C cm(-2). Resist polarity is negative and features with a linewidth down to 150 nm are obtained. The patterns have also been used as a mask for a subsequent etch of silicon, with a selectivity comparable to PMMA, and as the base for a lift-off process.

• Item Type: Articles
• Additional Information: The 35th International Conference on Micro- and Nano-Engineering (MNE)
• Keywords: Electron beam, electron beam lithography, hexane, lithography, physics, plasma, plasma polymerization, PMMA, resist
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Pedersen, Mr Rasmus and Thoms, Dr Stephen and Gadegaard, Professor Nikolaj
• Authors: Pedersen, R.H., Hamzah, M., Thoms, S., Roach, P., Alexander, M.R., and Gadegaard, N.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering; College of Science and Engineering > School of Engineering > Biomedical Engineering
• Journal Name: Microelectronic Engineering
• ISSN: 0167-9317