Holland, M., Longo, P., Paterson, G.W. , Reid, W., Long, A., Stanley, C.R., Craven, A.J., Thayne, I.G. and Gregory, R. (2009) Characteristics of Gd-GaO grown by MBE. Microelectronic Engineering, 86(3), pp. 244-248. (doi: 10.1016/j.mee.2008.01.043)
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Abstract
Ga2O3/GdGaO dielectric stacks have been grown on GaAs for MOSFETs. This paper highlights variations in the characteristics of GdGaO as the Gd flux, Ga2O flux and substrate temperature are changed. The growth rate, composition, crystallinity are discussed and the sheet resistance of final MOSFET structures are presented. The Gd compositional variation with depth is examined using Rutherford back scattering (RBS) and electron energy loss spectroscopy (EELS)
| Item Type: | Articles |
|---|---|
| Keywords: | Dielectric stack, EELS, energy, engineering, field-effect transistors, Ga203/Gdgao, GAAS, Gaas MOSFET, Gdgao, growth, III-V gate dielectric, MBE, MOSFET, MOSFETS, optics, physics, resistance, science, spectroscopy, substrate |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Reid, Mr William and Longo, Dr Paolo and Long, Professor Andrew and Paterson, Dr Gary and Stanley, Professor Colin and Craven, Professor Alan and Holland, Dr Martin |
| Authors: | Holland, M., Longo, P., Paterson, G.W., Reid, W., Long, A., Stanley, C.R., Craven, A.J., Thayne, I.G., and Gregory, R. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering College of Science and Engineering > School of Physics and Astronomy |
| Journal Name: | Microelectronic Engineering |
| Publisher: | Elsevier Science |
| ISSN: | 0167-9317 |
| Published Online: | 26 January 2008 |
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