In this section

On-wafer Characterisation of Noise Parameters of GaN HEMTs between 77 K and 400 K

Wang, J., Ofiare, A., Li, Q., Kelly, J., Wasige, E. and Li, C. (2024) On-wafer Characterisation of Noise Parameters of GaN HEMTs between 77 K and 400 K. In: 103rd ARFTG Microwave Measurement Conference, Washington DC, USA, 21 June 2024, (Accepted for Publication)

[img] Text
324971.pdf - Accepted Version
Restricted to Repository staff only
622kB

Item Type:Conference Proceedings
Status:Accepted for Publication
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Li, Qingxia and Li, Professor Chong and Kelly, James and wang, jing and Ofiare, Dr Afesomeh
Authors: Wang, J., Ofiare, A., Li, Q., Kelly, J., Wasige, E., and Li, C.
Subjects:Q Science > Q Science (General)
College/School:College of Science and Engineering > School of Engineering > James Watt Nanofabrication Centre

University Staff: Request a correction | Enlighten Editors: Update this record

Deposit and Record Details