Design and optimization of vertical nanowire tunnel FET with electrostatic doping

Bhardwaj, A., Kumar, P., Raj, B., Kumar, N. and Anand, S. (2023) Design and optimization of vertical nanowire tunnel FET with electrostatic doping. Engineering Research Express, 5(4), 045025. (doi: 10.1088/2631-8695/acff3a)

Abstract

While dealing with the nanoscale regime, most devices make sacrifices in terms of performance. So to meet the performance requirements, Electrostatic doped Vertical Nanowire Tunnel Field Effect Transistor (E-VNWTFET) is proposed and analysed in this work. The dimensions of Electrostatic VNWTFET structure are scaled down and then the analog performance parameters transconductance gm, gm2 (2nd order), gm3 (3rd order) and linearity parameters 2nd order Voltage Interception Point VIP2, 3rd order Voltage Interception Point VIP3, 3rd order Input Interception Point IIP3 and 3rd order Intermodulation Distortion IMD3 are analysed. It is observed that electrostatic technique of doping is better than charge plasma (CP) technique; because in CP technique costly metals are required for doping. The analog performance parameters of E-VNWTFET are investigated and using device simulation the demonstrated characteristics are compared with CP-VNWTFET. After simulation, the device exhibits ON current ION of 3.5 μA μm−1 and OFF current IOFF of 6.6 × 10−18 A μm−1; which offers a significant ION/IOFF of 1011. The reported subthreshold swing and Drain-induced barrier lowering DIBL are approx. 9.7 mV/Decade and 37.8 mV/V respectively.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Kumar, Dr Naveen
• Authors: Bhardwaj, A., Kumar, P., Raj, B., Kumar, N., and Anand, S.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Engineering Research Express
• Publisher: IOP Publishing
• ISSN: 2631-8695
• ISSN (Online): 2631-8695
• Published Online: 19 October 2023
• Copyright Holders: Copyright © 2023 IOP Publishing Ltd
• First Published: First published in Engineering Research Express 5(4):045025
• Publisher Policy: Reproduced in accordance with the publisher copyright policy