Effective-mass approach for n-type semiconductor nanowire MOSFET's arbitrary oriented

Bescond, M., Cavassilas, N., Asenov, A. and Lannoo, M. (2006) Effective-mass approach for n-type semiconductor nanowire MOSFET's arbitrary oriented. In: 7 th European Workshop on ULtimate Integration of Silicon, ULIS 2006, Grenoble, France, pp. 73-76. ISBN 88-900874-0-8

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:Integration, MOSFET, Nanowire MOSFET, Semiconductor, Silicon
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen
Authors: Bescond, M., Cavassilas, N., Asenov, A., and Lannoo, M.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISBN:88-900874-0-8

University Staff: Request a correction | Enlighten Editors: Update this record