In this section

A new implementation for RF SiCMOS transistor model using SDD for quantifying individual contribution to distortion from transistor's nonlinear parameters

Abuelmaatti, A., Thayne, I., McGregor, I. and Wasige, E. (2006) A new implementation for RF SiCMOS transistor model using SDD for quantifying individual contribution to distortion from transistor's nonlinear parameters. In: Asia Pacific Microwave Conference, Yokohama, Japan,

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:Implementation, Microwave, Model
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and McGregor, Dr Ian and Thayne, Prof Iain
Authors: Abuelmaatti, A., Thayne, I., McGregor, I., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:Institute of Electronics, Information and Communication Engineers (IEICE) of Japan.

University Staff: Request a correction | Enlighten Editors: Update this record

Deposit and Record Details