Impact of body thickness fluctuations in nanometer scale UTB SOI MOSFETs on SRAM cell functionality

Samsudin, K., Cheng, B., Brown, A., Roy, S. and Asenov, A. (2005) Impact of body thickness fluctuations in nanometer scale UTB SOI MOSFETs on SRAM cell functionality. In: 6th European Conference on ULtimate Integration of Silicon - ULIS 2005, Bologna, Italy,

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Item Type:Conference Proceedings
Keywords:Body, Fluctuation, Fluctuations, Impact, Integration, MOSFET, MOSFETS, Scale, Silicon, Soi MOSFETS, SRAM, Thickness, Utb Soi, Utb-Soi
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Brown, Mr Andrew and Cheng, Dr Binjie and Roy, Professor Scott
Authors: Samsudin, K., Cheng, B., Brown, A., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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