Impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs

Riddet, C., Brown, A., Alexander, C., Watling, J., Roy, S. and Asenov, A. (2005) Impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs. In: Silicon Nanoelectronics Workshop 2005, Kyoto, Japan,

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Item Type:Conference Proceedings
Keywords:Confinement, Double Gate MOSFET, Fluctuation, Fluctuations, GAAS, Gate, Impact, Limit, MOSFET, MOSFETS, Performance, Quantum, Scattering, Silicon, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Brown, Mr Andrew and Alexander, Dr Craig and Riddet, Mr Craig and Watling, Dr Jeremy and Roy, Professor Scott
Authors: Riddet, C., Brown, A., Alexander, C., Watling, J., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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