Kalna, K., Asenov, A. and Passlack, M. (2005) Monte Carlo simulation of implant free InGaAs MOSFETs. In: New Phenomena in Mesoscopic Structures - 7 (NPMS) and the fifth in the series of Surfaces and Interfaces of Mesoscopic Devices (SIMD), NPMS-7/SIMD-5, Maui, Hawaii,
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| Item Type: | Conference Proceedings |
|---|---|
| Keywords: | Body, Device, Devices, Fluctuations, Gate, Implant Free, INGAAS, Interface, Interfaces, Intrinsic Parameter Fluctuation, Monte Carlo, Monte Carlo Simulation, Monte-Carlo-Simulation, MOSFET, MOSFETS, Parameter Fluctuations, Simulation, Surface, Surfaces |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Kalna, Dr Karol |
| Authors: | Kalna, K., Asenov, A., and Passlack, M. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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