1.3um single-mode extended cavity GaInNAs lasers produced using a sputtered SiO2 quantum well intermixing technique

Harris, J., Bryce, A., Kowalski, O. and Marsh, J. (2005) 1.3um single-mode extended cavity GaInNAs lasers produced using a sputtered SiO2 quantum well intermixing technique. In: International Symposium on Compound Semiconductors 2005 - ISCS2005, Rust, Germany,

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Item Type:Conference Proceedings
Keywords:Cavity, Compound Semiconductor, Gainnas, Laser, Lasers, Quantum, Quantum Well Intermixing, Semiconductor, Semiconductors, Well
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Bryce, Prof Ann
Authors: Harris, J., Bryce, A., Kowalski, O., and Marsh, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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