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Sub-100nm strained Si CMOS : Device performance and circuit behavior

Yang, L., Watling, J., Asenov, A., Barker, J. and Roy, S. (2004) Sub-100nm strained Si CMOS : Device performance and circuit behavior. In: 7th International Conference on Solid State and Intergrated Circuit Technology, Beijing, China,

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Item Type:Conference Proceedings
Keywords:Behavior, CMOS, Device, Performance, Si, Strained Si, Strained-Si, Technology
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Asenov, Professor Asen and Watling, Dr Jeremy and Roy, Professor Scott
Authors: Yang, L., Watling, J., Asenov, A., Barker, J., and Roy, S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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