Monte-Carlo investigation of interface roughness scattering in relaxed and strained Si n-MOSFETs

Yang, L., Watling, J., Wilkins, R., Barker, J. and Asenov, A. (2004) Monte-Carlo investigation of interface roughness scattering in relaxed and strained Si n-MOSFETs. In: Condensed Matter and Materials Physcis Conference - CMMP04, Warwick, UK,

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Item Type:Conference Proceedings
Keywords:Interface, Interface Roughness, Interface Roughness Scattering, Monte Carlo, N-MOSFETS, Scattering, Si, Strained Si, Strained-Si
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Yang, L., Watling, J., Wilkins, R., Barker, J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:Institute of Physics

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