Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study

Yang, L., Watling, J., Wilkins, R., Barker, J. and Asenov, A. (2004) Reduced interface roughness in sub-100nm strained Si n-MOSFETs - A Monte Carlo simulation study. In: 5th European Workshop on Ultimate Integration of Silicon - ULIS04, Leuven, Belgium, pp. 23-26.

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Item Type:Conference Proceedings
Keywords:Integration, Interface, Interface Roughness, Monte Carlo, Monte Carlo Simulation, Monte-Carlo-Simulation, N-MOSFETS, Si, Silicon, Simulation, Strained Si, Strained-Si
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Yang, L., Watling, J., Wilkins, R., Barker, J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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