Yang, L., Watling, J., Asenov, A., Barker, J. and Roy, S. (2004) Mobility and device performance in conventional and strained Si MOSFETs with high-k stack. In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, Munich, Germany, pp. 199-202.
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| Item Type: | Conference Proceedings |
|---|---|
| Keywords: | Device, Devices, High-K, Mobility, MOSFET, MOSFETS, Performance, Semiconductor, Si, Simulation, Strained Si, Strained-Si |
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Barker, Professor John and Asenov, Professor Asen and Watling, Dr Jeremy and Roy, Professor Scott |
| Authors: | Yang, L., Watling, J., Asenov, A., Barker, J., and Roy, S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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