Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2004) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100nm n-MOSFETs. In: International workshop on electrical characterization and reliability of high-k devices, Austin, USA,
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Item Type: | Conference Proceedings |
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Keywords: | Device, Devices, Impact, Mobility, N-MOSFETS, Performance |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Barker, Professor John and Asenov, Professor Asen and Watling, Dr Jeremy and Roy, Professor Scott |
Authors: | Watling, J., Yang, L., Asenov, A., Barker, J., and Roy, S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | International SEMATECH |
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