Scattering from body thickness fluctuations in double gate MOSFETs. An ab initio Monte Carlo simulation study

Riddet, C., Brown, A., Alexander, C., Watling, J., Roy, S. and Asenov, A. (2004) Scattering from body thickness fluctuations in double gate MOSFETs. An ab initio Monte Carlo simulation study. In: International workshop on Computational Electronics, IWCE-10, West Lafayette, USA, pp. 194-195.

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Item Type:Conference Proceedings
Keywords:Body, Channel, Double Gate MOSFET, Fluctuation, Fluctuations, Gate, Monte Carlo, Monte Carlo Simulation, Monte-Carlo-Simulation, MOSFET, MOSFETS, Propagation, Scattering, Simulation, Thickness, Transport
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Brown, Mr Andrew and Alexander, Dr Craig and Riddet, Mr Craig and Watling, Dr Jeremy and Roy, Professor Scott
Authors: Riddet, C., Brown, A., Alexander, C., Watling, J., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:IEEE

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