Li, X., Elgaid, K., McLelland, H. and Thayne, I. (2004) Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry-etch gate recessed 120nm T-gate HEMTs. In: Microelectronic and Nanoelectronic Engineering 2004, Rotterdam, The Netherlands,
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Item Type: | Conference Proceedings |
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Keywords: | Engineering, Gate, HEMT, HEMTS, Surface |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and McLelland, Mrs Helen and Li, Dr Xiang and Elgaid, Dr Khaled |
Authors: | Li, X., Elgaid, K., McLelland, H., and Thayne, I. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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