Impact scattering on random dopant induced current fluctuations in devanano MOSFETs

Alexander, C., Brown, A., Watling, J. and Asenov, A. (2004) Impact scattering on random dopant induced current fluctuations in devanano MOSFETs. In: Simulation of Semiconductor Processes and Devices, Munich, Germany, pp. 223-226.

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Item Type:Conference Proceedings
Keywords:Device, Devices, Fluctuation, Fluctuations, Impact, MOSFET, MOSFETS, Random Dopant, Scattering, Semiconductor, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Brown, Mr Andrew and Alexander, Dr Craig and Watling, Dr Jeremy
Authors: Alexander, C., Brown, A., Watling, J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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