Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications

Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I. and Hackbarth, T. (2003) Optimisation of sub 11nm Si/SiGe MODFETs for high linearity applications. In: IEEE Conference on Electron devices and solid state circuits, Hong Kong, pp. 331-344.

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Item Type:Conference Proceedings
Keywords:Circuits, Device, Devices, Electron, Optimisation, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain and Barker, Professor John and Asenov, Professor Asen and Watling, Dr Jeremy and Elgaid, Dr Khaled and Roy, Professor Scott
Authors: Yang, L., Asenov, A., Watling, J., Borici, M., Barker, J., Roy, S., Elgaid, K., Thayne, I., and Hackbarth, T.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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