3D statistical simulation of intrinsic fluctuations in decanano MOSFETS induced by discrete dopants, oxide thickness fluctuations and LER

Asenov, A. (2001) 3D statistical simulation of intrinsic fluctuations in decanano MOSFETS induced by discrete dopants, oxide thickness fluctuations and LER. In: Simulation of Semiconductor Processes and Devices, Vienna, pp. 162-169.

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:Device, Devices, Fluctuation, Fluctuations, MOSFET, MOSFETS, Semiconductor, Simulation, Thickness
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen
Authors: Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:Springer

University Staff: Request a correction | Enlighten Editors: Update this record