Asenov, A. (2001) 3D statistical simulation of intrinsic fluctuations in decanano MOSFETS induced by discrete dopants, oxide thickness fluctuations and LER. In: Simulation of Semiconductor Processes and Devices, Vienna, pp. 162-169.
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Item Type: | Conference Proceedings |
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Keywords: | Device, Devices, Fluctuation, Fluctuations, MOSFET, MOSFETS, Semiconductor, Simulation, Thickness |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen |
Authors: | Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | Springer |
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