Quantum corrections in 3-D drift diffusion simulation of decanano MOSFETs using an effective potential

Watling, J., Brown, A., Asenov, A. and Ferry, D. (2001) Quantum corrections in 3-D drift diffusion simulation of decanano MOSFETs using an effective potential. In: Simulation of semiconductor processes and devices, Vienna, pp. 81-85.

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Item Type:Conference Proceedings
Keywords:Decanano MOSFETS, Device, Devices, MOSFET, MOSFETS, Quantum, Quantum Corrections, Semiconductor, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Watling, J., Brown, A., Asenov, A., and Ferry, D.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:Springer

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