Novel high uniformity highly reproducible non-selective wet recess etch for InP HEMTs

Cao, X. and Thayne, I. (2002) Novel high uniformity highly reproducible non-selective wet recess etch for InP HEMTs. In: Microelectronic and Nanoelectronic Engineering 2002, Lugano, Switzerland,

Full text not currently available from Enlighten.


Item Type:Conference Proceedings
Keywords:Engineering, GAAS, HEMT, HEMTS, INP, Inp HEMTS, PHEMTS
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Thayne, Prof Iain
Authors: Cao, X., and Thayne, I.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

University Staff: Request a correction | Enlighten Editors: Update this record