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Intrinsic fluctuations in sub 10nm double-gate MOSFETs Introduced by discreteness of charge and matter

Brown, A., Asenov, A. and Watling, J. (2002) Intrinsic fluctuations in sub 10nm double-gate MOSFETs Introduced by discreteness of charge and matter. In: Proceedings Silicon Nanoelectronics Workshop 2002, Honolulu,

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Item Type:Conference Proceedings
Keywords:Charge, Double Gate MOSFET, Fluctuation, Fluctuations, MOSFET, MOSFETS, Silicon
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Brown, Mr Andrew and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Brown, A., Asenov, A., and Watling, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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