Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites

Kumar, N. , García, C. P., Rezaei, A. , Dixit, A., Asenov, A. and Georgiev, V. (2023) Electrolyte-Gated FET-based Sensing of Immobilized Amphoteric Molecules Including the Variability in Affinity of the Reactive Sites. In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Kobe, Japan, 27-29 September 2023, pp. 377-380. ISBN 9784863488038 (doi: 10.23919/SISPAD57422.2023.10319578)

Abstract

In this work, we developed a unique computational approach that allowed us to detect immobilized amphoteric molecules on the surface of an electrolyte-gated FET-based sensor. Our simulation methodology is based on a combination of the Site-Binding and Gouy-Chapman-Stern models which are solved self-consistently. Our analytical model allows us to describe the surface charge density due to the protonation and deprotonation of the reactive sites of amphoteric molecules. Moreover, we have analyzed the effect of variability in the affinity constant of reactive sites. We also studied the effect of random dopant fluctuations in nanowire FET using in-house simulator NESS to account for the reliability issues in FET-based sensor technology.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Dixit, Mr Ankit and Rezaei, Dr Ali and Kumar, Dr Naveen and Georgiev, Professor Vihar
• Authors: Kumar, N., García, C. P., Rezaei, A., Dixit, A., Asenov, A., and Georgiev, V.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9784863488038
• Copyright Holders: Copyright © 2023
• First Published: First published in 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy