Gate Oxide Induced Reliability Assessment of Junctionless FinFET-Based Hydrogen Gas Sensor

Gandhi, N., Jaisawal, R. K., Rathore, S., Kondekar, P. N., Dixit, A., Kumar, N. , Georgiev, V. and Bagga, N. (2023) Gate Oxide Induced Reliability Assessment of Junctionless FinFET-Based Hydrogen Gas Sensor. In: 2023 IEEE SENSORS, Vienna, Austria, 29 Oct - 01 Nov 2023, ISBN 9798350303872 (doi: 10.1109/SENSORS56945.2023.10324885)

Abstract

Gate oxide plays a crucial role in the performance of nano-scaled emerging devices. In FET-based sensors, gate-oxide-induced reliability analysis is essential for credible sensing. In this paper, using well-calibrated TCAD models, we analyzed the role of gate-induced drain leakage (GIDL) in a Junctionless FinFET-based Hydrogen (H2) gas sensor. Owing to high diffusivity and solubility, the Palladium (Pd) metal is employed as the gas-sensing surface, where the absorbed H2 molecules modulate the effective work function and, in turn, the threshold voltage (Vth) , opted as primary sensing merit. In a Junctionless device, the heavily doped and fully depleted channel leads to significant band overlapping between the channel and drain regions, in turn, causes band-to-band tunneling. Therefore, a proper design guideline that governs the effective channel conduction modulation is worth needed for the reliable operation of an H2 sensor.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Dixit, Mr Ankit and Kumar, Dr Naveen and Georgiev, Professor Vihar
• Authors: Gandhi, N., Jaisawal, R. K., Rathore, S., Kondekar, P. N., Dixit, A., Kumar, N., Georgiev, V., and Bagga, N.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 2168-9229
• ISBN: 9798350303872
• Copyright Holders: Copyright © 2023 IEEE
• First Published: First published in 2023 IEEE SENSORS
• Publisher Policy: Reproduced in accordance with the publisher copyright policy