Markov, S., Brown, A., Cheng, B., Roy, G., Roy, S. and Asenov, A. (2006) 3D statistical simulation of gate leakage fluctutations due to combined interface roughness and random dopants. In: International Conference on Solid State Devices and Materials. (SSDM 2006)., Yokohama,Japan, pp. 362-363.
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Item Type: | Conference Proceedings |
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Keywords: | Device, Devices, Gate, Interface, Interface Roughness, Random Dopant, Random Dopants, Simulation |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Markov, Dr Stanislav and Roy, Dr Gareth and Asenov, Professor Asen and Brown, Mr Andrew and Cheng, Dr Binjie and Roy, Professor Scott |
Authors: | Markov, S., Brown, A., Cheng, B., Roy, G., Roy, S., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Publisher: | THE JAPAN SOCIETY OF APPLIED PHYSICS |
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