MC simulation of delta doping placement in sub 100nm implant free InGaAs MOSFETs

Kalna, K., Wang, Q., Passlack, M. and Asenov, A. (2006) MC simulation of delta doping placement in sub 100nm implant free InGaAs MOSFETs. In: E-MRS IUMRS ICEM 2006, Nice, France, Symposium.

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Item Type:Conference Proceedings
Keywords:Delta Doping, Devices, Implant Free, INGAAS, Interface, MOSFET, MOSFETS, Simulation
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Kalna, Dr Karol
Authors: Kalna, K., Wang, Q., Passlack, M., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:European Materials Research Society

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