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Benchmarking a High Electron Mobility Transistor Using an Active Load-Pull System at 120 GHz -170 GHz

Wang, J., Ofiare, A., CHENG, H., Wasige, E. and Li, C. (2023) Benchmarking a High Electron Mobility Transistor Using an Active Load-Pull System at 120 GHz -170 GHz. 102nd ARFTG Microwave Measurement Symposium, San Antonio, TX, USA, 21-24 Jan 2024. (Accepted for Publication)

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Abstract

No abstract available.

Item Type:	Conference or Workshop Item
Keywords:	HEMT, large-signal, PAE, load-pull, gain.
Status:	Accepted for Publication
Refereed:	Yes
Glasgow Author(s) Enlighten ID:	Wasige, Professor Edward and Li, Professor Chong and Ofiare, Dr Afesomeh and CHENG, Huihua and wang, jing
Authors:	Wang, J., Ofiare, A., CHENG, H., Wasige, E., and Li, C.
Subjects:	Q Science > Q Science (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering
College/School:	College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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References

[1] Jornet, J.M., Knightly, E.W. & Mittleman, D.M. Wireless communications sensing and security above 100 GHz. Nat Commun 14, 841 (2023). https://doi.org/10.1038/s41467-023-36621-x. [2] Hirata, A. et al. 120-GHz-band wireless link technologies for outdoor 10-Gbit/s data transmission. IEEE Trans. Microw. Theory Tech. 60, 881–895 (2012). [3] P. Rodríguez-Vázquez, J. Grzyb and U. R. Pfeiffer, "RF Front-End Impairments for Ultra-Broadband Wireless Communication above 200 GHz," 2019 16th International Symposium on Wireless Communication Systems (ISWCS), Oulu, Finland, 2019, pp. 335-339, doi: 10.1109/ISWCS.2019.8877308. [4] Dan, I., Ducournau, G., Hisatake, S., Szriftgiser, P., Braun, R., & Kallfass, I. (2020). A superheterodyne 300 GHz wireless link for ultra-fast terahertz communication systems. International Journal of Microwave and Wireless Technologies, 12(7), 578-587. doi:10.1017/S1759078720000495 [5] C. De Martino, L. Galatro, R. Romano, G. Parisi and M. Spirito, "Hardware and Software Solutions for Active Frequency Scalable (Sub)mm-Wave Load–Pull," in IEEE Transactions on Microwave Theory and Techniques, vol. 68, no. 9, pp. 3769-3775, Sept. 2020. [6] J. Wang, L. -Y. Xue, B. Liu and C. Li, "Design of Terahertz InP pHEMT Using Machine Learning Assisted Global Optimization Techniques," 2021 16th European Microwave Integrated Circuits Conference (EuMIC), London, United Kingdom, 2022, pp. 67-70, doi: 10.23919/EuMIC50153.2022.9784068. [7] Karami, K. et al. (2023) "Robust sub-100 nm T-gate fabrication process using multi-step development," Micro and Nano Engineering, 19, p. 100211. doi:10.1016/j.mne.2023.100211. [8] Z. Griffith, M. Urteaga and P. Rowell, "A 140-GHz 0.25-W PA and a 55 - 135 GHz 115 - 135 mW PA High-Gain Broadband Power Amplifier MMICs in 250-nm InP HBT", 2019 IEEE MTT-S International Microwave Symposium (IMS), pp. 1245-1248, June 2019. [9] S. Daneshgar and J. F. Buckwalter, "Compact Series Power Combining Using Subquarter-Wavelength Baluns in Silicon Germanium at 120 GHz", IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 11, pp. 4844-4859, Nov 2018. [10] L. Samoska and Yoke Choy Leong, "65-145 GHz InP MMIC HEMT medium power amplifiers," 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), Phoenix, AZ, 2001, pp. 1805-1808 vol.3, doi: 10.1109/MWSYM.2001.967257. [11] M. Ćwikliński et al., "D-Band and G-Band High-Performance GaN Power Amplifier MMICs," in IEEE Transactions on Microwave Theory and Techniques, vol. 67, no. 12, pp. 5080-5089, Dec. 2019, doi: 10.1109/TMTT.2019.2936558. [12] E. O’Malley, A. Arias-Purdue, M. Guidry and J. Buckwalter, "Gallium Nitride HEMTs for Power Amplifiers above 100 GHz," 2022 IEEE 22nd Annual Wireless and Microwave Technology Conference (WAMICON), Clearwater, FL, USA, 2022, pp. 1-4, doi: 10.1109/WAMICON53991.2022.9786143. [13] K. Ning, Y. Fang, M. Rodwell and J. Buckwalter, "A 130-GHz Power Amplifier in a 250-nm InP Process with 32% PAE," 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Los Angeles, CA, USA, 2020, pp. 1-4, doi: 10.1109/RFIC49505.2020.9218351. [14] X. Mei et al., “First demonstration of amplification at 1 THz using 25- nm InP high electron mobility transistor process,” IEEE Electron Device Letters., vol. 36, pp. 327-329, Apr. 2015.

Deposit and Record Details

ID Code:	309636
Depositing User:	jing wang
Datestamp:	29 Nov 2023 09:31
Last Modified:	30 Nov 2023 02:32
Date of acceptance:	16 November 2023
Date Deposited:	28 November 2023