Temperature Dependent Hall Parameter Measurements of Heterogeneous InGaAs/InP Ultrafast Transistors

Kelly, J., Wang, J., Cheng, H., Ofiare, A. and Li, C. (2023) Temperature Dependent Hall Parameter Measurements of Heterogeneous InGaAs/InP Ultrafast Transistors. ARMMS: RF and Microwave Society Conference (November 2023), Cambourne, UK, 6-7 November 2023. (Accepted for Publication)

Abstract

In this paper, we present an investigation into the temperature dependence of Hall parameters, i.e., carrier density and mobility, of InGaAs/InP high electron mobility transistors fabricated in the James Watt Nanofabrication Centre at the University of Glasgow. A Lake Shore Cryotronics TTPX Probe Station setup was used to perform measurements from 77 K to 450 K under three different magnetic field strengths. The van der Pauw technique was used to determine sheet resistance and carrier density, from which carrier mobility was calculated. Two different components of the transistor structure were investigated: the channel and the cap layer. We report a channel mobility of 1.30 m2 V−1s−1 at 300 K, and such, can approve the materials suitable for high frequency applications at 100 GHz and beyond.

• Item Type: Conference or Workshop Item
• Keywords: Hall effect, van der Pauw method, InGaAs/InP, HEMTs.
• Status: Accepted for Publication
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Li, Professor Chong and Kelly, James and Ofiare, Dr Afesomeh and CHENG, Huihua and wang, jing
• Authors: Kelly, J., Wang, J., Cheng, H., Ofiare, A., and Li, C.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Microwave and Terahertz Electronics

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