Single GaAs nanowire based photodetector fabricated by dielectrophoresis

García Núñez, C. , Braña, A. F., López, N., Pau, J. L. and García, B. J. (2020) Single GaAs nanowire based photodetector fabricated by dielectrophoresis. Nanotechnology, 31(22), 225604. (doi: 10.1088/1361-6528/ab76ee) (PMID:32187022)

Abstract

Mechanical manipulation of nanowires (NWs) for their integration in electronics is still problematic because of their reduced dimensions, risking to produce mechanical damage to the NW structure and electronic properties during the assembly process. In this regard, contactless NW manipulation based methods using non-uniform electric fields, like dielectrophoresis (DEP) are usually much softer than mechanical methods, offering a less destructive alternative for integrating nanostructures in electronic devices. Here, we report a feasible and reproducible dielectrophoretic method to assemble single GaAs NWs (with radius 35–50 nm, and lengths 3–5 μm) on conductive electrodes layout with assembly yields above 90% per site, and alignment yields of 95%. The electrical characteristics of the dielectrophoretic contact formed between a GaAs NW and conductive electrodes have been measured, observing Schottky barrier like contacts. Our results also show the fast fabrication of diodes with rectifying characteristics due to the formation of a low-resistance contact between the Ga catalytic droplet at the tip of the NW when using Al doped ZnO as electrode. The current-voltage characteristics of a single Ga-terminated GaAs NW measured in dark and under illumination exhibit a strong sensitivity to visible light under forward bias conditions (around two orders of magnitude), mainly produced by a change on the series resistance of the device.

• Item Type: Articles
• Additional Information: This research was supported by TEC2010-20796 (FPI grant), TEC2013-48350-R and TEC2016-78433-R projects, funded by the Spanish Ministerio de Ciencia e Innovación (MICINN). Authors are also thankful to Servicio Interdepartamental de Investigación (SIdI) at Universidad Autónoma de Madrid for technical support on the characterization of nanowires.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Garcia Nunez, Dr Carlos
• Authors: García Núñez, C., Braña, A. F., López, N., Pau, J. L., and García, B. J.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Nanotechnology
• Publisher: IOP Publishing
• ISSN: 0957-4484
• ISSN (Online): 1361-6528
• Published Online: 18 March 2020
• Copyright Holders: Copyright © 2020 The Author(s)
• First Published: First published in Nanotechnology 31(22):225604
• Publisher Policy: Reproduced under a Creative Commons license