Yi, X. et al. (2023) Afterpulsing in Ge-on-Si single-photon avalanche diodes. IEEE Photonics Technology Letters, 35(7), pp. 959-962. (doi: 10.1109/lpt.2023.3289653)
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Abstract
In this letter, we investigate afterpulsing in 26 and 100 μm diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width of 50 ns. Ge-on-Si SPADs were found to exhibit a 1% afterpulsing probability at a delay time of 200 μs and temperature of 78 K, and 130 μs at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at 1.31 μm . We demonstrate that reducing the detector diameter can also be an effective way to restrict afterpulsing in this material system.
Item Type: | Articles |
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Additional Information: | This work was supported in part by Royal Academy of Engineering (RF201819-18-187, CiET2021_123); Innovate UK (17706, 44835); Defence Science and Technology Laboratory (DSTLX-1000092774); Engineering and Physical Sciences Research Council (UK EPSRC EP/N003446/1, EP/S026428/1, EPN003225/1, EP/T001011/1, EP/T00097X/1). |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Dumas, Dr Derek and Ferre Llin, Dr Lourdes and Kirdoda, Mr Jaroslaw and Paul, Professor Douglas and Millar, Dr Ross |
Authors: | Yi, X., Greener, Z., Fleming, F., Kirdoda, J., Dumas, D. C. S., Saalbach, L., Muir, D. A. S., Ferre-Llin, L., Millar, R. W., Paul, D. J., and Buller, G. S. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Photonics Technology Letters |
Publisher: | Institute of Electrical and Electronics Engineers (IEEE) |
ISSN: | 1041-1135 |
ISSN (Online): | 1941-0174 |
Published Online: | 26 June 2023 |
Copyright Holders: | Copyright © 2023 IEEE |
First Published: | First published in IEEE Photonics Technology Letters 35(7):959-962 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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