RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation

Roy, S., Kaya, S., Asenov, A. and Barker, J.R. (1999) RF analysis methodology for Si and SiGe FETs based on transient Monte Carlo simulation. In: International Conference on Simulation of Semiconductor Processes and Devices., Kyoto, Japan, 6-8 September 1999, pp. 147-150. ISBN 4930813980 (doi: 10.1109/SISPAD.1999.799282)

Abstract

A comprehensive analysis methodology allowing investigation of the RF performance of Si and strained Si:SiGe MOSFETs is presented. It is based on transient ensemble Monte Carlo simulation which correctly describes device transport, and employs a finite element solver to account for complex device geometries. Transfer characteristics and figures of merit for a number of existing and proposed RF MOSFETs are discussed.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Roy, Professor Scott
• Authors: Roy, S., Kaya, S., Asenov, A., and Barker, J.R.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 4930813980
• Copyright Holders: Copyright © 1999 Institute of Electrical and Electronics Engineers
• First Published: First published in International Conference on Simulation of Semiconductor Processes and Devices (1999):147-150
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher