Indication of Non-equilibrium Transport in SiGe p-MOSFETs

Zhao, Y.P. et al. (2000) Indication of Non-equilibrium Transport in SiGe p-MOSFETs. In: 30th European Solid-State Device Research Conference, Cork, Ireland, 11-13 September 2000, pp. 224-227. ISBN 2863322486

Abstract

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• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Watling, Dr Jeremy and Asenov, Professor Asen
• Authors: Zhao, Y.P., Kaya, S., Watling, J.R., Asenov, A., Barker, J.R., Palmer, M., Braithwaite, G., Whall, T.E., Parker, E.H.C., Waite, A., and Evans, A.G.R.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 2863322486
• Copyright Holders: Copyright © 2000 Institute of Electrical and Electronics Engineers
• First Published: First published in proceedings of the 30th European Solid-State Device Research Conference (2000):224-227
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher