Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D `Atomistic' simulation study

Asenov, A., Balasubramaniam, R., Brown, A.R., Davies, J.H. and Saini, S. (2000) Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D `Atomistic' simulation study. In: International Electron Devices Meeting, San Francisco, California, 10-13 December 2000, pp. 279-282. ISBN 0780364384 (doi: 10.1109/IEDM.2000.904311)

Abstract

In this paper we use 3D simulations to study the amplitudes of random telegraph signals (RTS) associated with the trapping of a single carrier in interface states in the channel of sub 100 nm (decanano) MOSFETs. Both simulations using continuous doping charge and random discrete dopants in the active region of the MOSFETs are presented. We have studied the dependence of the RTS amplitudes on the position of the trapped charge in the channel and on the device design parameters. We have observed a significant increase in the maximum RTS amplitude when discrete random dopants are employed in the simulations.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen
• Authors: Asenov, A., Balasubramaniam, R., Brown, A.R., Davies, J.H., and Saini, S.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 0780364384
• Copyright Holders: Copyright © 2000 Institute of Electrical and Electronics Engineers
• First Published: First published in International Electron Devices Meeting (2000):279-282
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher