Low switching power neuromorphic perovskite devices with quick relearning functionality

Assi, D. S., Haris, M. P.U., Karthikeyan, V. , Kazim, S., Ahmad, S. and Roy, V. A.L. (2023) Low switching power neuromorphic perovskite devices with quick relearning functionality. Advanced Electronic Materials, 9(8), 2300285. (doi: 10.1002/aelm.202300285)

Abstract

In the quest to reduce energy consumption, there is a growing demand for technology beyond silicon as electronic materials for neuromorphic artificial intelligence devices. Equipped with the criteria of energy efficiency and excellent adaptability, organohalide perovskites can emulate the characteristics of synaptic functions in the human brain. In this aspect, this study designs and develops CsFAPbI3-based memristive neuromorphic devices that can switch at low power and show larger endurance by adopting the powder engineering methodology. The neuromorphic characteristics of the CsFAPbI3-based devices exhibit an ultra-high paired-pulse facilitation index for an applied electric stimuli pulse. Moreover, the transition from short-term to long-term memory requires ultra-low energy with long relaxation times. The learning and training cycles illustrate that the CsFAPbI3-based devices exhibit faster learning and memorization process owing to their larger carrier lifetime compared to other perovskites. The results provide a pathway to attain low-power neuromorphic devices that are synchronic to the human brain's performance.

• Item Type: Articles
• Additional Information: The authors acknowledge grants from EPSRC under the “New Horizons” call Grand no: EP/X016846/1. The authors gratefully acknowledge support from the EPSRC under the “New Horizons” call Grand no: EP/X016846/1. SA acknowledges the funding from the European Union H2020 Programme under a European Research Council Consolidator grant [MOLEMAT,no 726360]. SA and SK thank from INTERACTION (PID2021-129085OB-I00) and ARISE (PID2019-111774RB-100), from the Spanish Ministry of Science and Innovation.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Assi, Dani and Vellaisamy, Professor Roy and Karthikeyan, Dr Vaithinathan
• Authors: Assi, D. S., Haris, M. P.U., Karthikeyan, V., Kazim, S., Ahmad, S., and Roy, V. A.L.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Advanced Electronic Materials
• Publisher: Wiley
• ISSN: 2199-160X
• ISSN (Online): 2199-160X
• Published Online: 03 July 2023
• Copyright Holders: Copyright © 2023 The Authors
• First Published: First published in Advanced Electronic Materials 9(8):2300285
• Publisher Policy: Reproduced under a Creative Commons License