High performance III-V MOSFETs: a dream close to reality?

Kalna, K., Yang, L. and Asenov, A. (2002) High performance III-V MOSFETs: a dream close to reality? In: 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications., Manchester, UK, 18-19 November 2002, pp. 243-248. ISBN 0780375300

Abstract

We have studied the performance potential of sub 100 nm compound MOSFETs with InGaAs channel and high-k gate insulator, using ensemble Monte Carlo simulations. The results show that such devices could deliver 200-300% increase in the drive current compared to conventional MOSFETs with analogous channel lengths and device structure. This improvement is much higher than the 20-30% drive current increase in similar devices with strained Si channels on virtual SiGe substrates. As a viable solutions to the constant drive current bottleneck anticipated in the International Roadmap for Semiconductors for the next generations of Si MOSFETs it advocates further research in respect of the manufacturability of compound MOSFETs.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Kalna, Dr Karol
• Authors: Kalna, K., Yang, L., and Asenov, A.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Device Modelling Group
• Publisher: Institute of Electrical and Electronics Engineers
• ISBN: 0780375300
• Copyright Holders: Copyright © 2002 Institute of Electrical and Electronics Engineers
• First Published: First published in 10th IEEE International Symposium on Electron Devices for Microwave and Optoelectronic Applications (2002):243-248
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher