Dhongde, A., Ofiare, A., Karami, K. and Wasige, E. (2023) Buffer-Free GaN-on-SiC HEMTs with Bond Pad Heat Sinks. UK Semiconductors 2023, Sheffield, UK, 12-13 July 2023. (Accepted for Publication)
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299958.pdf - Accepted Version Restricted to Repository staff only 130kB |
| Item Type: | Conference or Workshop Item |
|---|---|
| Status: | Accepted for Publication |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Wasige, Professor Edward and Dhongde, Aniket and Karami, Mr Kaivan and Ofiare, Dr Afesomeh |
| Authors: | Dhongde, A., Ofiare, A., Karami, K., and Wasige, E. |
| College/School: | College of Science and Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
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